Compact Modeling of Total Ionizing Dose and Aging Effects in MOS Technologies
Author | : |
Publisher | : |
Total Pages | : 15 |
Release | : 2015 |
ISBN-10 | : OCLC:940484986 |
ISBN-13 | : |
Rating | : 4/5 (86 Downloads) |
Book excerpt: This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential ([psi]s) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The presented approach is suitable for modeling TID and aging effects in advanced MOS devices and ICs.