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Language: en
Pages:
Pages:
Type: BOOK - Published: 2010 - Publisher:
Maximum breakdown voltage. This work focuses on the application of mechanical stress to improve the performance of Lateral Diffusion MOSFET. The device behavior
Language: en
Pages:
Pages:
Type: BOOK - Published: 2009 - Publisher:
Experiments demonstrate that strain breaks the on-resistance/breakdown voltage tradeoff by enhancing on-resistance while maintaining breakdown voltage. There ar
Language: en
Pages: 438
Pages: 438
Type: BOOK - Published: 2017-03-16 - Publisher: CRC Press
This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engi
Language: en
Pages: 353
Pages: 353
Type: BOOK - Published: 2009-11-14 - Publisher: Springer Science & Business Media
Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices
Language: en
Pages: 166
Pages: 166
Type: BOOK - Published: 2011 - Publisher:
The underlying physical mechanisms of destructive single event effects (SEE) from heavy ion radiation have been widely studied in traditional vertical double-di