The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key s

Contents: Modelling of Sub-Micron Devices; Boltzmann Transport Equation; Transport and Material Considerations for Submicron Devices; Epitaxial Growth for Sub M

This text is a first attempt to pull together the whole of semiconductor science and technology since 1970 in so far as semiconductor multilayers are concerned.

Nonequilibrium hot charge carriers play a crucial role in the physics and technology of semiconductor nanostructure devices. This book, one of the first on the

The Advanced Study Institute (AS!) considered a number offacets of the very rapidly advancing field of theoretical and experimental aspects of ultrashort proces