Total Ionizing Dose Effects on MOS and Bipolar Devices in the Natural Space Radiation Environment
Author | : |
Publisher | : |
Total Pages | : 8 |
Release | : 1998 |
ISBN-10 | : OCLC:68383212 |
ISBN-13 | : |
Rating | : 4/5 (12 Downloads) |
Book excerpt: Mechanisms that control the response of MOS and bipolar devices to ionizing radiation in the natural space environment are briefly reviewed. Standard tests based on room-temperature irradiation and elevated temperature annealing are described for MOS devices to bound the effects of oxide and interface-trap charge in space. For bipolar devices that exhibit enhanced low-dose-rate sensitivity, a standard test equivalent to that developed for MOS devices is not available. However, screening techniques based on room temperature and/or elevated temperature irradiations are described which can minimize the risk to spacecraft and satellite electronics from this phenomenon.