Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment
Download or Read eBook Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment PDF written by V. Narayanan and published by The Electrochemical Society. This book was released on 2009-05 with total page 367 pages. Available in PDF, EPUB and Kindle.
| Author | : V. Narayanan |
| Publisher | : The Electrochemical Society |
| Total Pages | : 367 |
| Release | : 2009-05 |
| ISBN-10 | : 9781566777094 |
| ISBN-13 | : 1566777097 |
| Rating | : 4/5 (94 Downloads) |
Book Synopsis Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment by : V. Narayanan
Book excerpt: This issue of ¿ECS Transactions¿ describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics include strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
