Molecular-beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide/indium Gallium Arsenide Single Quantum-well Modulation-doped Field-effect Transistor Structures
Download or Read eBook Molecular-beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide/indium Gallium Arsenide Single Quantum-well Modulation-doped Field-effect Transistor Structures PDF written by David Constantine Radulescu and published by . This book was released on 1988 with total page 263 pages. Available in PDF, EPUB and Kindle.
| Author | : David Constantine Radulescu |
| Publisher | : |
| Total Pages | : 263 |
| Release | : 1988 |
| ISBN-10 | : OCLC:731754748 |
| ISBN-13 | : |
| Rating | : 4/5 (48 Downloads) |
Book Synopsis Molecular-beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide/indium Gallium Arsenide Single Quantum-well Modulation-doped Field-effect Transistor Structures by : David Constantine Radulescu
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