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Simulation and Modeling of Submicron Semiconductor Devices by a New Hydrodynamic Method
Language: en
Pages: 350

Simulation and Modeling of Submicron Semiconductor Devices by a New Hydrodynamic Method

Authors: Qi Lin (Ph. D.)
Categories: Hydrodynamics
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ICIAM 91
Language: en
Pages: 424

ICIAM 91

Authors: Robert E. O'Malley
Categories: Mathematics
Type: BOOK - Published: 1992-01-01 - Publisher: SIAM

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Proceedings -- Computer Arithmetic, Algebra, OOP.
Two-dimensional Submicron Semiconductor Device TCAD by Hydrodynamic and Numerical Boltzmann Simulation
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Two-dimensional Submicron Semiconductor Device TCAD by Hydrodynamic and Numerical Boltzmann Simulation

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Categories: Hydrodynamics
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Authors: Karl Hess
Categories: Technology & Engineering
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Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms a
Semiconductor Equations
Language: en
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Authors: Peter A. Markowich
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In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equation