Gallium nitride (GaN)-based High Electron Mobility Transistors (HEMTs) for high voltage, high power switching and regulating for space applications are studied

Nowadays, the microelectronics technology is based on the mature and very well established silicon (Si) technology. However, Si exhibits some important limitati

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most a

Nano particles have created a high interest in recent years by virtue of their unusual mechanical, electrical, optical and magnetic properties and find wide app