Process and Device Modeling for Integrated Circuit Design

Download or Read eBook Process and Device Modeling for Integrated Circuit Design PDF written by F. van de Wiele and published by Springer. This book was released on 1977-11-30 with total page 890 pages. Available in PDF, EPUB and Kindle.
Process and Device Modeling for Integrated Circuit Design
Author :
Publisher : Springer
Total Pages : 890
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ISBN-10 : STANFORD:36105030455393
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Rating : 4/5 (93 Downloads)

Book Synopsis Process and Device Modeling for Integrated Circuit Design by : F. van de Wiele

Book excerpt: An Advanced Study Institute on process and device modeling for integrated circuit design was held in Louvain-la-Neuve. Belgium on July 19-29. 1977 under the auspices of the Scientific Affairs Division of NATO. The Institute was organized by a scientific organizing committee consisting of Professor F. Van de Wiele of the Universite Catholique de Louvain. Professor W. L. Engl of the Technische Hochschule Aachen and Professor P. Jespers of the Universite Catholique de Louvain. This book represents the contributions of the lecturers at the Institute and the chapters present a concise treatment of a very timely subject. namely. process and device modeling for integrated circuit design. The organization of the book parallels the program at the Institute with an introd0ction ·comprised of a review of mo deling and basic semiconductor physics. This is followed by the chapters devoted to basic technologies. modeling of bipolar and MoS devices. The last chapter of the book presents the specific topic of process modeling. The subject matter of this book is suitable for a wide range of interests from the advanced student. through the practisihg physicist and engineer. to the research worker. Although a novice may find some difficulty with the mathematical development. he can acquire a perspective into the field of process and device modeling for integrated circuit design with this bDOk. Likewise. portions of this book may be used as a textbook since the chap ters are intructional and self-contained.


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